View STGP10NB60SD_8856884.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

september 2011 doc id 11860 rev 3 1/15 15 stgf10nb60sd STGP10NB60SD 16 a, 600 v, low drop igbt wi th soft and fast recovery diode features low on-voltage drop (v ce(sat) ) high current capability very soft ultra fast recovery antiparallel diode applications light dimmer static relays motor drive description this igbt utilizes the advanced power mesh? process featuring extremely low on-state voltage drop in low-frequency working conditions (up to 1 khz). figure 1. internal schematic diagram 1 2 3 1 2 3 to-220 to-220fp tab table 1. device summary order codes marking package packaging stgf10nb60sd gf10nb60sd to-220fp tube STGP10NB60SD gp10nb60sd to-220 tube www.st.com
contents stgf10nb60sd, STGP10NB60SD 2/15 doc id 11860 rev 3 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
stgf10nb60sd, STGP10NB60SD electrical ratings doc id 11860 rev 3 3/15 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit stgf10nb60sd STGP10NB60SD v ces collector-emitter voltage (v ge = 0) 600 v i c (1) 1. calculated according to the iterative formula continuous collector current at t c = 25 c 23 29 a i c (1) continuous collector current at t c = 100 c 12 16 a i cl (2) 2. vclamp = 80% of v ces , t j =150 c, r g =1k , v ge =15 v turn-off latching current 20 a i cp (3) 3. pulse width limited by maximum junction temperature and turn-off within rbsoa pulsed collector current 80 a v ge gate-emitter voltage 20 v i f diode rms forward current at t c = 25 c 20 a i fsm surge non repetitive forward current t p = 10 ms sinusoidal 55 a v iso isolation withstand voltage (rms) from all three leads to external heatsink (t=1 s; t c = 25 c) 2500 v p tot total dissipation at t c = 25 c 25 80 w t j operating junction temperature ? 55 to 150 c table 3. thermal data symbol parameter value unit stgf10nb60sd STGP10NB60SD r thj-case thermal resistance junction-case igbt 5 1.56 c/w r thj-case thermal resistance junction-case diode 5.6 2.2 c/w r thj-amb thermal resistance junction-ambient 62.5 c/w i c t c () t jmax () t c ? r thj c ? v ce sat () max () t jmax () i c t c () , () ------------------------------------------------------------------------------------------------------- =
electrical characteristics stgf10nb60sd, STGP10NB60SD 4/15 doc id 11860 rev 3 2 electrical characteristics (t j =25 c unless otherwise specified) table 4. static symbol parameter test conditions min. typ. max. unit v (br)ces collector-emitter breakdown voltage (v ge = 0) i c = 250 a 600 v v (br)ecs emitter-collector breakdown voltage (v ge = 0) i c = 1 ma 20 v i ges gate-emitter leakage current (v ce = 0) v ge = 20 v 100 na i ces collector cut-off current (v ge = 0) v ce = 600 v v ce = 600 v, t j = 125 c 10 100 a a v ge(th) gate threshold voltage v ce = v ge , i c = 250 a 2.5 5 v v ce(sat) collector-emitter saturation voltage v ge = 15 v, i c = 5 a v ge = 15 v, i c = 10 a v ge = 15 v, i c = 10 a, t j = 125 c 1.15 1.35 1.25 1.75 v g fs (1) 1. pulsed: pulse duration = 300 s, duty cycle 1.5% forward transconductance v ce = 15 v , i c = 10 a 5 s table 5. dynamic symbol parameter test conditions min. typ. max. unit c ies c oes c res input capacitance output capacitance reverse transfer capacitance v ce = 25 v, f = 1 mhz, v ge = 0 - 610 65 12 - pf pf pf q g total gate charge v ce = 400 v, i c = 10 a, v ge = 15 v (see figure 19) -33- nc
stgf10nb60sd, STGP10NB60SD el ectrical characteristics doc id 11860 rev 3 5/15 table 6. switching on/off (inductive load) symbol parameter test cond itions min. typ. max. unit t d(on) t r (di/dt) on turn-on delay time current rise time turn-on current slope v cc = 480 v, i c = 10 a r g =1 k , v ge = 15 v (see figure 18) - 0.7 0.46 8 - s s a/s t r (v off ) t d ( off ) t f off voltage rise time turn-off delay time current fall time v cc = 480 v, i c = 10 a r g =1 k , v ge = 15 v (see figure 18) - 2.2 1.2 1.2 -s t r (v off ) t d ( off ) t f off voltage rise time turn-off delay time current fall time v cc = 480 v, i c = 10 a r g =1 k , v ge = 15 v, t j = 125 c (see figure 18) - 3.8 1.2 1.9 -s table 7. switching energy (inductive load) symbol parameter test conditions min. typ. max. unit eon (1) e off (2) e ts 1. eon is the turn-on losses when a typi cal diode is used in the test circui t. if the igbt is offered in a package with a co-pack diode, the co-pack diode is used as external diode. igbts and diode are at the same temperature (25c and 125c) 2. turn-off losses include also the tail of the collector current. turn-on switching losses turn-off switching losses total switching losses v cc = 480 v, i c = 10 a r g =1 k , v ge = 15 v (see figure 18) - 0.6 5 5.6 - mj mj mj e off (2) turn-off switching losses v cc = 480 v, i c = 10 a r g =1 k , v ge = 15 v, t j = 125 c (see figure 18) -8-mj table 8. collector-emitter diode symbol parameter test co nditions min typ. max unit v f forward on-voltage i f = 10 a i f = 10 a, t c = 125 c 1.4 2.2 v v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i f = 7 a, v r = 40 v, di/dt = 100 a/s (see figure 21) 37 40 2.1 ns nc a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i f = 7 a, v r = 40 v, t j = 125 c, di/dt = 100 a/s (see figure 21) 61 98 3.2 ns nc a
electrical characteristics stgf10nb60sd, STGP10NB60SD 6/15 doc id 11860 rev 3 2.1 electrical characterist ics (curves) figure 2. output characteristics figure 3. transfer characteristics figure 4. transconductance figure 5. collector-emitter on voltage vs. temperature figure 6. collector-emitter on voltage vs. collector current figure 7. normalized gate threshold vs. temperature
stgf10nb60sd, STGP10NB60SD el ectrical characteristics doc id 11860 rev 3 7/15 figure 8. normalized breakdown voltage vs. temperature figure 9. gate charge vs. gate-emitter voltage figure 10. capacitance variations figure 11. switching losses vs. temperature figure 12. switching losses vs. gate resistance figure 13. switching losses vs. collector current
electrical characteristics stgf10nb60sd, STGP10NB60SD 8/15 doc id 11860 rev 3 figure 14. thermal impedance for to-220 figure 15. thermal impedance for to-220fp figure 16. turn-off soa figure 17. forward voltage drop versus forward current 0 5 10 15 20 25 3 0 3 5 40 45 0.0 0.5 1.0 1.5 2.0 2.5 3 .0 3 .5 4.0 vfm(v) tj=25c (m a xim u m v a l u e s ) tj=150c (m a xim u m v a l u e s ) tj=150c (typic a lv a l u e s ) tj ifm(a)
stgf10nb60sd, STGP10NB60SD test circuits doc id 11860 rev 3 9/15 3 test circuits figure 18. test circuit for inductive load switching figure 19. gate charge test circuit figure 20. switching waveforms figure 21. diode recovery times waveform
package mechanical data stgf10nb60sd, STGP10NB60SD 10/15 doc id 11860 rev 3 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark.
stgf10nb60sd, STGP10NB60SD package mechanical data doc id 11860 rev 3 11/15 figure 22. to-220fp drawing table 9. to-220fp mechanical data dim. mm. min. typ. max. a4.4 4.6 b2.5 2.7 d 2.5 2.75 e0.45 0.7 f0.75 1 f1 1.15 1.70 f2 1.15 1.70 g4.95 5.2 g1 2.4 2.7 h 10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 dia 3 3.2 7012510_rev_k a b h di a l7 d e l6 l5 l2 l 3 l4 f1 f2 f g g1
package mechanical data stgf10nb60sd, STGP10NB60SD 12/15 doc id 11860 rev 3 table 10. to-220 type a mechanical data dim. mm. min. typ. max. a 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 d 15.25 15.75 d1 1.27 e10 10.40 e 2.40 2.70 e1 4.95 5.15 f 1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ? p 3.75 3.85 q 2.65 2.95
stgf10nb60sd, STGP10NB60SD package mechanical data doc id 11860 rev 3 13/15 figure 23. to-220 type a drawing 00159 88 _typea_rev_ s
revision history stgf10nb60sd, STGP10NB60SD 14/15 doc id 11860 rev 3 5 revision history table 11. document revision history date revision changes 18-nov-2005 1 new release. 16-dec-2010 2 inserted device in to-220fp. updated table 2: absolute maximum ratings , table 8: collector- emitter diode and packages mechanical data section 4: package mechanical data . 22-sep-2011 3 modified: unit value table 7 on page 5 , figure 2 and figure 3 on page 6 .
stgf10nb60sd, STGP10NB60SD doc id 11860 rev 3 15/15 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by two authorized st representatives, st products are not recommended, authorized or warranted for use in milita ry, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2011 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

▲Up To Search▲

Price & Availability of STGP10NB60SD

	To Download STGP10NB60SD Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .